Semiconductor Devices and Methods of Fabricating the Same

A semiconductor device comprising:

• a discharge active portion and a plurality of electrode active portions, each of the discharge active portions and electrode active portions being defined by a device isolation pattern on a semiconductor substrate that is doped with a first-type dopant, the electrode active portions being electrically connected to each other;
• a plurality of capping electrodes disposed respectively on the electrode active portions;
• a capacitor-dielectric layer disposed between each of the capping electrodes and each of the electrode active portions;
• a counter doped region disposed in the discharge active portion and doped with a second-type dopant;
• a lower interlayer dielectric disposed on the surface of the semiconductor substrate;
• a plurality of electrode contact plugs respectively contacting the capping electrodes;
• a discharge contact plug contacting the counter doped region;
• and
• a lower interconnection disposed on the lower interlayer dielectric and contacting top surfaces of the electrode contact plugs and a top surface of the discharge contact plug.