Semiconductor Constructions
AssigneeMicron Technology, Inc.
InventorsLucien J. Bissey, William A. Stanton
Life of this patent
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Abstract
The invention includes semiconductor constructions containing optically saturable absorption layers. An optically saturable absorption layer can be between photoresist and a topography, with the topography having two or more surfaces of differing reflectivity relative to one another. The invention also includes methods of patterning photoresist in which a saturable absorption layer is provided between the photoresist and a topography with surfaces of differing reflectivity, and in which the differences in reflectivity are utilized to enhance the accuracy with which an image is photolithographically formed in the photoresist.
Claims9
1-38. (canceled)
A semiconductor construction, comprising:
- a semiconductor substrate;
- in at least one cross-sectional view, spaced projections over the substrate, the spaced projections being spaced from one another by an intervening region;
- a first layer over the spaced projections and over the intervening region between the spaced projections;
- an optically saturable absorption layer over the first layer;
- and
- photoresist over the optically saturable absorption layer.
A semiconductor construction, comprising:
- an optically saturable absorption material over two or more regions of a semiconductor substrate, with at least two of the two or more regions differing in reflectivity relative to one another relative to electromagnetic radiation;
- and
- photoresist over the optically saturable absorption material, and over only one of said at least two regions.
Dependencies are inferred from the claim text.