Memory cell that includes a carbon-based memory element and methods of forming the same
AssigneeSanDisk 3D LLC
InventorsMichael Y. Chan, April D. Schricker
Life of this patent
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Abstract
In a first aspect, a method of forming a memory cell is provided that includes: (a) forming a layer of dielectric material above a substrate; (b) forming an opening in the dielectric layer; (c) depositing a solution that includes a carbon-based switching material on the substrate; (d) rotating the substrate to cause the solution to flow into the opening and to form a carbon-based switching material layer within the opening; and (e) forming a memory element using the carbon-based switching material layer. Numerous other aspects are provided.
Claims27
A method of forming a memory cell, the method comprising:
- (a) forming a layer of dielectric material above a substrate;
- (b) forming an opening in the dielectric layer;
- (c) depositing a solution that includes a carbon-based switching material on the substrate;
- (d) rotating the substrate to cause the solution to flow into the opening and to form a carbon-based switching material layer within the opening;
- and
- (e) forming a memory element using the carbon-based switching material layer.
A method of forming a memory cell, the method comprising:
- (a) forming a layer of dielectric material above a substrate;
- (b) forming an opening in the dielectric layer;
- (c) depositing a solution that includes a carbon-based switching material on the substrate;
- (d) rotating the substrate to cause the solution to flow into the opening and to form a carbon-based switching material layer within the opening;
- (e) annealing the substrate after step (d) so that the carbon-based switching material remains in the opening;
- (f) repeating steps (c)-(e) until the carbon-based switching material layer within the opening has a desired thickness;
- and
- (g) forming a memory element using the carbon-based switching material layer.
A memory cell comprising:
- a substrate having a first conducting layer formed above the substrate;
- a dielectric layer having an opening formed above the first conducting layer to expose the first conducting layer;
- a carbon-based switching layer formed within the opening to fill at least a portion of the opening;
- a second conducting layer within the opening and formed above the carbon-based switching layer;
- and
- a steering element formed above the substrate.
A memory cell comprising:
- a first conductor;
- a dielectric layer formed above the first conductor, the dielectric layer having an opening formed therein;
- a carbon-based switching layer formed within the opening to fill at least a portion of the opening;
- a conducting layer within the opening and formed above the carbon-based switching layer;
- a diode formed above the first conductor;
- and
- a second conductor formed above the dielectric layer and the diode.
Dependencies are inferred from the claim text.