Ingot formed from basic ingots, wafer made from said ingot and associated method

Abstract

A method for manufacturing a heterostructure for use in applications in the electronics, optical and optoelectronics fields, by implanting atomic species inside a first substrate called “donor” substrate, so as to form an embrittlement area therein, assembling a second substrate, called “recipient” substrate, on the donor substrate, detaching the rear portion of the donor substrate along the embrittlement area, so as to customize a thin layer of interest on the recipient substrate, wherein the donor substrate is an ingot or an ingot section formed from at least two basic ingots assembled together along two of their respective complementary longitudinal surfaces.

Dependencies are inferred from the claim text.