Electroless Plating System

An electroless cobalt deposition system, comprising:

• an initiation solution source for supplying an initiation solution, the initiation solution containing reducing agents;
• a cobalt plating solution tank for supplying a cobalt plating solution, the cobalt plating solution containing reducing agents at a concentration which stabilizes the cobalt plating solution;
• a plating chamber configured to have an open configuration and a closed configuration, the open configuration defining an outer chamber including a lower dispense arm for dispensing the initiation solution onto a work piece during an initiation phase, and the closed configuration defining an inner chamber including an upper dispense arm for dispensing the cobalt plating solution onto the work piece during the deposition phase;
• the plating chamber having the open and closed configurations provides for plating of a cobalt deposition layer over an outlier feature smaller than about five hundred nanometers and isolated by about one thousand nanometers of a semiconductor;
• and
• wherein the reducing agents in the initiation solution define a controlled concentration of reducing agents in the cobalt plating solution so as to stabilize the cobalt plating solution while also plating the cobalt deposition layer over an outlier feature.

An electroless cobalt deposition system, comprising:

• an initiation solution source for supplying an initiation solution, the initiation solution containing reducing agents, the initiation solution source configured to control a concentration of dissolved oxygen in the initiation solution to be below about four and a half parts per million;
• a cobalt plating solution tank for supplying a cobalt plating solution, the cobalt plating solution containing reducing agents at a concentration which stabilizes the cobalt plating solution, the cobalt plating solution tank configured to control a concentration of dissolved oxygen in the cobalt plating solution to be below about four and a half parts per million and replenish de-ionized water in the cobalt plating solution;
• a plating chamber configured to have an open configuration and a closed configuration, the open configuration defining an outer chamber including a lower dispense arm for dispensing the initiation solution onto a work piece during an initiation phase, and the closed configuration defining an inner chamber including an upper dispense arm for dispensing the plating solution onto the work piece during a deposition phase;
• the plating chamber having the open and closed configurations provides for plating of a cobalt deposition layer over an outlier feature smaller than about five hundred nanometers and isolated by about one thousand nanometers of a semiconductor;
• and
• wherein the reducing agents in the initiation solution define a controlled concentration of reducing agents in the cobalt plating solution so as to stabilize the cobalt plating solution while also plating the cobalt deposition layer over an outlier feature.