Apparatus and method for producing silicon carbide single crystal
AssigneeBridgestone Corporation
InventorDaisuke KONDO
Life of this patent
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Abstract
A crucible includes: a crucible body configured to hold the sublimation raw material; a lid configured to close an opening of the crucible body and provided with a mounting portion configured to support the seed crystal; and a guide member extending toward a sublimation raw material side from an outer peripheral portion of the mounting portion. The guide member has a cover portion configured to cover an outer peripheral portion of the seed crystal from the sublimation raw material side, the cover being protruded from a mounting unit side end portion provided on a mounting portion side.
Claims5
A apparatus for producing a silicon carbide single crystal, which configured to hold a seed crystal including silicon carbide and a sublimation raw material in a crucible while facing each other, configured to generate sublimation gas by heating the seed crystal and the sublimation raw material, and grow the silicon carbide single crystal on the seed crystal, wherein
- the crucible comprises:
- a crucible body configured to hold the sublimation raw material;
- a lid configured to close an opening of the crucible body and provided with a mounting portion configured to support the seed crystal;
- and
- a guide member extending toward a sublimation raw material side from an outer peripheral portion of the mounting portion, wherein
- the guide member has a cover portion configured to cover an outer peripheral portion of the seed crystal from the sublimation raw material side, the cover being protruded from a mounting unit side end portion provided on a mounting portion side.
A method for producing a silicon carbide single crystal by holding a seed crystal including silicon carbide and a sublimation raw material in a crucible while facing each other, generating sublimation gas by heating the seed crystal and the sublimation raw material, and growing the silicon carbide single crystal on the seed crystal, the method comprising the steps of:
- (A) heating the sublimation raw material to generate the sublimation gas in a crucible including a crucible body configured to hold the sublimation raw material, a lid provided with a mounting portion configured to close an opening of the crucible body and configured to support the seed crystal, and a guide member extending toward the sublimation raw material from an outer peripheral portion of the mounting portion;
- and
- (B) growing the silicon carbide single crystal on the seed crystal in a state where a cover portion covers an outer peripheral portion of the seed crystal from a sublimation raw material side, the cover being protruded from a mounting portion side end portion provided on a mounting portion side.
Dependencies are inferred from the claim text.