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US 2011/0212608 A1Published application
Sputtering-Less Ultra-Low Energy Ion Implantation
AssigneeMicron Technology, Inc.
InventorsShu Qin, Li Li
Life of this patent
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Abstract
Methods of implanting dopants into a silicon substrate using a predeposited sacrificial material layer with a defined thickness that is removed by sputtering effect is provided.
Claims23
A method of implanting dopant ions in a silicon substrate comprising an overlying sacrificial material, the method comprising:
- implanting a dose of the dopant ions into the silicon substrate while sputtering the sacrificial material with substantially no sputtering of the silicon surface, wherein substantially no sacrificial material remains on the silicon substrate upon completion of the implanting of said dose of the dopant ions.
A method of implanting dopant ions in a silicon substrate comprising an overlying sacrificial material, the method comprising:
- implanting a dose of the dopant ions into the silicon substrate while sputtering the sacrificial material but maintaining a thickness of said sacrificial material over the silicon substrate to completion of said implanting of said dose of dopant ions such that there is substantially no sputtering of the silicon surface during said implanting and substantially no sacrificial material remains on the silicon substrate at the completion of said implanting of said dose of the dopant ions.
A method of implanting dopant ions in a silicon substrate comprising an overlying sacrificial material, the method comprising:
- implanting a dose of the dopant ions into the silicon substrate while sputtering the sacrificial material with substantially no sputtering of the silicon surface, wherein substantially no sacrificial material remains on the silicon substrate upon completion of the implanting of said dose of the dopant ions;
- after said implanting, forming the sacrificial material over the silicon substrate comprising said dose of dopant ions;
- and
- implanting a second dose of the dopant ions into the silicon substrate while sputtering the sacrificial material with substantially no sputtering of the silicon surface, wherein substantially no sacrificial material remains on the silicon substrate upon completion of the implanting of said second dose of the dopant ions.
1 more element
Dependencies are inferred from the claim text.