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US 2011/0212550 A1Published application
Methods for detecting metal precipitates in a semiconductor wafer
AssigneeMEMC Electronic Materials, Inc.
InventorsJeffrey L. Libbert, Lu Fei
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Abstract
Methods are disclosed for monitoring the amount of metal contamination imparted during wafer processing operations such as polishing and cleaning. The methods include subjecting a silicon-on-insulator structure to the semiconductor process, precipitating metal contamination in the structure and delineating the metal contaminants.
Claims8
A method for detecting metal precipitates in a semiconductor wafer having a front surface, the method comprising:
- contacting the wafer with an aqueous HF solution to create pits, holes and/or cavities on the front surface of the wafer at or near the sites of metal precipitates at the front surface of the wafer;
- and
- inspecting the front surface of the wafer for the presence of pits, holes and/or cavities.
Dependencies are inferred from the claim text.