Method and apparatus for enhanced dipole lithography
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Jhih Kuo, Chun-Kuang Chen, Ya Hui Chang, Tommy Kuo, Hsien-Cheng Wang, Ko-Bin Kao
Life of this patent
Estimating the term…
Loading patent…
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Jhih Kuo, Chun-Kuang Chen, Ya Hui Chang, Tommy Kuo, Hsien-Cheng Wang, Ko-Bin Kao
Estimating the term…
Provided is a lithography system that includes a source for providing energy, an imaging system configured to direct the energy onto a substrate to form an image thereon, and a diffractive optical element (DOE) incorporated with the imaging system, the DOE having a first dipole located in a first direction and a second dipole located in the first direction or a second direction perpendicular the first direction. The first dipole includes a first energy-transmitting region spaced a first distance from a center of the DOE. The second dipole includes a second energy-transmitting region spaced a second distance from the center of the DOE. The first distance is greater than the second distance.
A lithography system, comprising:
A lithography exposure method, comprising:
A method for lithography processing in a lithography system, comprising:
Dependencies are inferred from the claim text.