Electroconductive laminate and protective plate for plasma display

An electroconductive laminate comprising a substrate and an electroconductive film formed on the substrate, wherein the electroconductive film has laminated n lamination units (wherein n is an integer of from 1 to 6) each having a first metal oxide layer, a second metal oxide layer and a metal layer arranged in this order from the substrate side, and further has a first metal oxide layer disposed as the outermost layer of the electroconductive film;

• the first metal oxide layer is an oxide layer containing titanium element and an M element, wherein the M element is niobium element, tantalum element, zirconium element or hafnium element, and the amount of the M element is from 10 to 60 atom % in the total amount of titanium element and the M element in the first metal oxide layer;
• the second metal oxide layer is a layer having, as its main component, an oxide containing zinc element;
• the metal layer is a layer having silver as its main component;
• and the second metal oxide layer and the metal layer in the lamination unit are directly in contact with each other.

A process for producing an electroconductive laminate, which comprises repeating the following steps (1) to (3) n times (wherein n is an integer of from 1 to 6);

• and then forming a first metal oxide layer as the outermost layer by carrying out the following step (1):
• (1) a step of forming a first metal oxide layer on one surface of a substrate by a sputtering method using a target containing titanium element and an M element (wherein the M element is at least one element selected from the group consisting of elements having atomic weights of at least 80);
• (2) a step of forming a second metal oxide layer by a sputtering method using a target containing zinc element;
• (3) a step of forming a metal layer by a sputtering method using a target containing silver as its main component.

A process for producing an electroconductive laminate, which comprises repeating the following steps (1) to (4) n times (wherein n is an integer of from 1 to 6);

• and then forming a first metal oxide layer as the outermost layer by carrying out the following step (1):
• (1) a step of forming a first metal oxide layer on one surface of a substrate by a sputtering method using a target containing titanium element and an M element (wherein the M element is at least one element selected from the group consisting of elements having atomic weights of at least 80);
• (2) a step of forming a second metal oxide layer by a sputtering method using a target containing zinc element;
• (3) a step of forming a metal layer by a sputtering method using a target containing silver as its main component;
• (4) a step of forming a third metal oxide layer by a sputtering method using a target containing zinc element.

A process for producing an electroconductive laminate, which comprises repeating the following steps (1) to (3) in total n times (wherein n is an integer of from 1 to 6);

• and then forming a first metal oxide layer as the outermost layer by carrying out the following step (1):
• (1) a step of forming a first metal oxide layer on one surface of a substrate by a sputtering method using a target containing titanium element and an M element (wherein the M element is niobium element, tantalum element, zirconium element or hafnium element);
• (2) a step of forming a second metal oxide layer by a sputtering method using a target containing zinc element;
• (3) a step of forming a metal layer by a sputtering method using a target containing silver as its main component.

A process for producing an electroconductive laminate, which comprises repeating the following steps (1) to (4) in total n times (wherein n is an integer of from 1 to 6);

• and then forming a first metal oxide layer as the outermost layer by carrying out the following step (1):
• (1) a step of forming a first metal oxide layer on one surface of a substrate by a sputtering method using a target containing titanium element and an M element (wherein the M element is niobium element, tantalum element, zirconium element or hafnium element);
• (2) a step of forming a second metal oxide layer by a sputtering method using a target containing zinc element;
• (3) a step of forming a metal layer by a sputtering method using a target containing silver as its main component;
• (4) a step of forming a third metal oxide layer by a sputtering method using a target containing zinc element.