Trench-type capacitor, semiconductor device having the same, and semiconductor module having the semiconductor device

A semiconductor device, comprising:

• a semiconductor substrate having a cell array region and a peripheral circuit region;
• an inactive region defining at least one cell active region in the cell array region, and first and second peripheral active regions in the peripheral circuit region;
• at least one cell buried pattern located in the cell array region, having a cell conductive pattern and a cell mask pattern which are sequentially stacked from a lower portion of the semiconductor substrate to a top surface of the semiconductor substrate, and configured to extend from the at least one cell active region to the inactive region;
• and
• at least one trench-type capacitor located in the peripheral circuit region,
• wherein the trench-type capacitor comprises:
• node patterns located at the same level as the at least one cell buried pattern, the node patterns having peripheral conductive patterns and peripheral mask patterns which are sequentially stacked from a lower portion of the semiconductor substrate to the top surface of the semiconductor substrate, and the node patterns extending from the first peripheral active region to the inactive region;
• a substrate connection pattern located on the semiconductor substrate and being in electrical contact with the first and second peripheral active regions;
• and
• a node connection pattern spaced apart from the substrate connection pattern, located on the inactive region, and being in electrical contact with the node patterns.

A semiconductor module, comprising:

• a module substrate having at least electrical pads and an internal circuit, which are in electrical contact with each other;
• and
• at least one semiconductor package structure located on the module substrate and having at least one semiconductor device in electrical contact with the electrical pads,
• wherein the at least one semiconductor device has at least one trench-type capacitor in a semiconductor substrate,
• wherein the trench-type capacitor comprises:
• an inactive region located in the semiconductor substrate and defining first and second active regions;
• at least one node pattern having a conductive pattern and a mask pattern which are sequentially stacked from a lower portion of the semiconductor substrate to a top surface of the semiconductor substrate, and the at least one node pattern extending from the first active region to the inactive region;
• a substrate connection pattern located on the semiconductor substrate and being in electrical contact with the first and second active regions;
• and
• a node connection pattern spaced apart from the substrate connection pattern, located on the inactive region, and being in electrical contact with the at least one node pattern.