One-time programmable semiconductor device
AssigneeBroadcom Corporation
InventorsFrank Hui, Xiangdong Chen
Life of this patent
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Abstract
According to one embodiment, a one-time programmable (OTP) semiconductor device includes a programming dielectric under a patterned electrode and over an implant region, where the programming dielectric forms a programming region of the OTP semiconductor device. The OTP semiconductor device further includes an isolation region laterally separating the programming dielectric from a coupled semiconductor structure, where the isolation region can be used in conjunction with the patterned electrode and the implant region to protect the coupled semiconductor structure. In one embodiment, the programming dielectric comprises a gate dielectric. In another embodiment, the electrode and implant regions are doped to be electrochemically similar.
Claims20
A one-time programmable (OTP) semiconductor device comprising:
- an isolation region formed in a semiconductor substrate;
- a first implant region formed substantially around said isolation region in said semiconductor substrate;
- a gate dielectric having a first thickness formed over a first portion of said first implant region;
- a programming dielectric having a second thickness less than said first thickness formed over a second portion of said first implant region;
- an electrode formed over said gate dielectric and said programming dielectric;
- said isolation region substantially separating said gate dielectric from said programming dielectric.
A method of fabricating a one-time programmable (OTP) semiconductor device, said method comprising:
- forming an isolation region in a semiconductor substrate;
- forming a first implant region substantially around said isolation region in said semiconductor substrate;
- forming a gate dielectric having a first thickness over a first portion of said first implant region;
- forming a programming dielectric having a second thickness less than said first thickness over a second portion of said first implant region;
- forming an electrode over said gate dielectric and said programming dielectric;
- said isolation region substantially separating said gate dielectric from said programming dielectric.
An integrated circuit (IC) including at least one CMOS device and at least one one-time programmable (OTP) semiconductor device, said OTP semiconductor device comprising:
- an isolation region formed in a semiconductor substrate of said IC;
- a first implant region formed substantially around said isolation region in said semiconductor substrate;
- a gate dielectric having a first thickness formed over a first portion of said first implant region;
- a programming dielectric having a second thickness less than said first thickness formed over a second portion of said first implant region;
- an electrode formed over said gate dielectric and said programming dielectric;
- said isolation region substantially separating said gate dielectric from said programming dielectric.
Dependencies are inferred from the claim text.