Transistors with immersed contacts
AssigneeFreescale Semiconductor, Inc.
InventorsMarius K. Orlowski, James D. Burnett
Life of this patent
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Abstract
Embodiments of a semiconductor structure include a first current electrode region, a second current electrode region, and a channel region. The channel region is located between the first current electrode region and the second current electrode region, and the channel region is located in a fin structure of the semiconductor structure. A carrier transport in the channel region is generally in a horizontal direction between the first current electrode region and the second current electrode region.
Claims20
A semiconductor device comprising:
- an electrode structure;
- and
- a first contact, wherein the first contact extends into the electrode structure and is electrically coupled to the electrode structure.
A semiconductor device comprising:
- a semiconductor structure on a substrate, wherein the semiconductor structure comprises a first current electrode region, a second current electrode region, and a fin structure between the first current electrode region and the second current electrode region, wherein a channel region is located in the fin structure, and a carrier transport in the channel region is generally in a horizontal direction between the first current electrode region and the second current electrode region;
- a gate structure formed over the fin structure and the substrate;
- and
- a first contact within the gate structure, wherein sidewalls of the first contact are completely surrounded by the gate structure, and wherein the first contact is electrically coupled to the gate structure.
A semiconductor device comprising:
- a gate structure on a substrate;
- and
- a first contact formed in an opening in the gate structure that extends from a top of the gate structure to the substrate, wherein sidewalls of the first contact are completely surrounded by the gate structure, and wherein the first contact is electrically coupled to the gate structure.
Dependencies are inferred from the claim text.