Non-volatile semiconductor memory device and method of manufacturing non-volatile semiconductor memory device

A method for manufacturing a non-volatile semiconductor memory device comprising:

• forming a stacked structure on a semiconductor substrate, the stacked structure having a structure where a insulation layer and a conductive layer are alternately stacked plurality of times;
• forming a first mask pattern on the stacked structure, the first mask pattern having a plurality of first line patterns being located parallel with each other;
• selectively etching a region exposed by the first mask pattern in the stacked structure to divide the stacked structure into a plurality of fin-shaped members, each of the plurality of fin-shaped members having a structure where an insulation film and a conductive film are alternately stacked plurality of times;
• forming a resistance change film on an exposed side surface of the conductive film of each of the plurality of fin-shaped members;
• embedding a conductive material between the plurality of fin-shaped members on which the resistance change film is formed;
• forming a second mask pattern on the plurality of fin-shaped members on which the resistance change film is formed and on the embedded conductive material, the second mask pattern having a plurality of second line patterns, each of the plurality of second line patterns extending in a direction intersecting with the fin-shaped members and being arranged side by side each other;
• and
• selectively etching a region exposed by the second mask pattern in the embedded conductive material so as to separate the embedded conductive material into a plurality of pillar members, each of the plurality of pillar members extending approximately vertical to the surface of the semiconductor substrate.