Protected Alloy Surfaces In Microchannel Apparatus and Catalysts, Alumina Supported Catalysts, Catalyst Intermediates, and Methods of Forming Catalysts and Microchannel Apparatus

A method of conducting a chemical reaction or separating a mixture comprising at least two components in the reactor or separator of claim 1, comprising either:

• (a) wherein the reactor or separator is a reactor and the reactor further comprises a layer of alumina disposed over the layer of aluminide;
• and a catalytic material disposed over the layer of alumina, and comprising a step of passing a reactant into the complex microchannel and reacting the reactant in the complex microchannel to form at least one product;
• or
• (b) wherein the reactor or separator is a separator and comprising a step of passing a fluid comprising at least two components into the complex microchannel, preferentially separating at least one of the at least two components within the complex microchannel.

A method of conducting a chemical reaction in a the microchannel reactor or separator, comprising:

• a microchannel defined by at least one microchannel wall;
• a post-assembly coating of aluminide disposed over the at least one microchannel wall,
• a layer alumina disposed over the layer of aluminide;
• and
• a catalytic material disposed over the layer of alumina,
• the method comprising a step of passing a reactant into the complex microchannel and reacting the reactant in the microchannel to form at least one product.

A method of forming a catalyst, comprising:

• adding a sintering aid to alumina to form an article with an alumina layer with sintering aid;
• and
• heating the article with an alumina layer with sintering aid;
• and subsequently
• depositing a catalyst material.

A method of forming protected surfaces, comprising:

• providing an article comprising an aluminide surface;
• heating the article comprising an aluminide surface to at least about 800° C. in an inert or reducing atmosphere;
• and
• exposing the aluminde surface to an oxidizing gas at a temperature of at least about 800° C. to grow an oxide layer.