Double-sided semiconductor structure and method for manufacturing same
AssigneeSTMicrolectronics S.A.
InventorsMonica Micciche', Antonio Giuseppe Grimaldi, Gaetano Bazzano, Nicolò Frazzetto
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Abstract
A semiconductor structure including a substrate of semiconductor material of a first type of conductivity; a first semiconductor layer set in direct electrical contact with the substrate on a first side of the substrate; a second semiconductor layer set in direct electrical contact with the substrate on a second side of the substrate; a first active electronic device formed in the first semiconductor layer; and a second active electronic device formed in the second semiconductor layer.
Claims22
A semiconductor structure comprising:
- a substrate of semiconductor material of a first type of conductivity;
- a first semiconductor layer arranged in direct electrical contact with the substrate on a first side of the substrate;
- a second semiconductor layer arranged in direct electrical contact with the substrate on a second side of the substrate;
- a first active electronic device formed in the first semiconductor layer;
- and
- a second active electronic device formed in the second semiconductor layer.
A method for manufacturing a semiconductor structure comprising the steps of:
- providing a substrate of semiconductor material of a first type of conductivity and having a first side and a second side, opposite to one another;
- forming, on the first side of the substrate, a first semiconductor layer;
- forming, on the second side of the substrate, a second semiconductor layer;
- forming, in the first semiconductor layer, a first active electronic device;
- and
- forming, in the second semiconductor layer, a second active electronic device.
Dependencies are inferred from the claim text.