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US 2011/0086507 A1Published application
Method for providing oxide layers
AssigneeImec
InventorsPhilippe Soussan, Eric Beyne, Philippe Muller
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Abstract
A method for providing an oxide layer on a semiconductor substrate is disclosed. In one aspect, the method includes obtaining a semiconductor substrate. The substrate may have a three-dimensional structure, which may comprise at least one hole. The method may also include forming an oxide layer on the substrate, for example, on the three-dimensional structure, by anodizing the substrate in an acidic electrolyte solution.
Claims13
A method of providing an oxide layer on a semiconductor substrate, the method comprising:
- obtaining a semiconductor substrate comprising a device substrate with isolation zones, a multilayer interconnect structure, and an insulating layer between the device substrate and the multilayer interconnect structure;
- etching at least one hole from a backside of the device substrate to the insulating layer through one of the isolation zones;
- and
- forming an oxide layer on the substrate by anodizing the substrate in an acidic electrolyte solution.
1 more element
Dependencies are inferred from the claim text.