Method for fabricating damascene interconnect structure having air gaps between metal lines
AssigneeInnolux Display Corp.
InventorSHUO-TING YAN
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Abstract
An exemplary method for fabricating a damascene interconnect structure includes the following. First, providing a substrate. Second, depositing a multilayer dielectric film on the substrate. Third, forming a patterned photoresist on the multilayer dielectric film. Fourth, etching the multilayer dielectric film to form a plurality of trenches, a portion of each of the trenches having an enlarged width at each of sidewalls thereof. Fifth, filling the trenches with conductive metal to form conductive lines such that air is trapped in extremities of the enlarged width portions of the trenches.
Claims20
A method for fabricating a damascene interconnect structure, the method comprising:
- providing a substrate;
- depositing a multilayer dielectric film on the substrate;
- forming a patterned photoresist on the multilayer dielectric film;
- etching the multilayer dielectric film to form a plurality of trenches, a portion of each of the trenches having an enlarged width at each of sidewalls thereof;
- and
- filling the trenches with conductive metal to form conductive lines such that air is trapped in extremities of the enlarged width portions of the trenches.
A method for fabricating a damascene interconnect structure, the method comprising:
- providing a substrate;
- depositing a multilayer dielectric film on the substrate;
- forming a patterned photoresist on the multilayer dielectric film;
- etching the multilayer dielectric film to form a plurality of trenches, wherein at least one layer of the multilayer dielectric film has a faster etching rate than the other one or more layers of the multilayer dielectric film such that a portion of each of the trenches has an enlarged width at each of sidewalls thereof;
- and
- filling the trenches with conductive metal to form conductive lines such that air is trapped in extremities of the enlarged width portions of the trenches.
Dependencies are inferred from the claim text.