Methods of manufacturing a hybrid electrical contact
AssigneeMicron Technology, Inc.
InventorJonathan Doebler
Life of this patent
Estimating the term…
Abstract
Techniques for manufacturing an electronic device. In certain embodiments, a substrate includes a lower patterned layer that has a target conductor. A hybrid-vertical contact may be disposed directly on the target conductor. The hybrid vertical contact may include a lower-vertical contact directly on the target conductor and an upper-vertical contact directly on the lower-vertical contact. The upper-vertical contact may have an upper width that is greater than a lower width of the lower-vertical contact.
Claims24
A method of manufacturing a device, comprising:
- providing a substrate;
- forming a target conductor on the substrate with a first lithography system of a newer generation;
- depositing a first intermediate layer on the target conductor;
- forming a lower-vertical contact recess on the target conductor in the first intermediate layer with a second lithography system of the newer generation;
- depositing a second intermediate layer on the first intermediate layer;
- forming an upper-vertical contact recess on the lower-vertical contact recess in the second intermediate layer with a third lithography system of an older generation.
A method of manufacturing a device, comprising:
- providing a substrate;
- forming a generally horizontal local interconnect on the substrate with a first lithography system having a first resolution limit;
- depositing a first dielectric layer on the horizontal interconnect;
- simultaneously forming in the first dielectric layer a capacitor-shaping recess and a lower-contact recess with a second lithography system having the first resolution limit;
- and
- forming an upper-contact recess on the lower contact recess with a third lithography system having a second resolution limit.
A method of manufacturing a device, comprising:
- patterning a local interconnect in a lower dielectric layer;
- and
- forming a hybrid-vertical contact directly on the local interconnect, such that the hybrid-vertical contact is electrically coupled to the local interconnect, wherein forming the hybrid-vertical contact comprises:
- forming a lower-vertical contact through an intermediate dielectric layer formed on the lower dielectric layer, wherein the lower-vertical contact is formed directly on the local interconnect, the lower-vertical contact having a uniform lower width;
- and
- forming an upper-vertical contact through an upper dielectric layer formed on the intermediate dielectric layer, wherein the upper-vertical contact is formed directly on the lower-vertical contact.
Dependencies are inferred from the claim text.