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US 2011/0086488 A1Published application
Plasma etch for chromium alloys
AssigneeTexas Instruments Incorporated
InventorAbbas ALI
Life of this patent
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Abstract
A reactive ion etching (RIE) process comprising a chlorine source gas and an oxygen source gas with an atomic ratio of chlorine to oxygen in the plasma of at least 6 to 1 is used to etch chromium alloy films such as SiCr, SiCrC, SiCrO, SiCrCO, SiCrCN, SiCrON, SiCrCON, CrO, CrN, CrON, and NiCr for example. Additionally, a fluorine source may be added to the etch chemistry.
Claims20
A method for plasma etching a chromium based thin film, comprising:
- providing a photoresist pattern on said chromium based thin film;
- and
- exposing said thin film with said photoresist pattern to a reactive ion etching chemistry including a chlorine containing gas and an oxygen containing gas wherein an atomic ratio of said chlorine to said oxygen is at least 6.
A method for fabricating an integrated circuit comprising the steps of:
- forming a thin film comprising a chromium alloy on a substrate;
- providing a photoresist pattern on said thin film;
- and
- exposing said thin film with said photoresist pattern to a reactive ion etching chemistry comprising a chlorine source, an oxygen source, and a fluorine source wherein an atomic ratio of said chlorine to oxygen is at least 6.
1 more element
Dependencies are inferred from the claim text.