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US 2011/0086487 A1Published application
Semiconductor Device with Reduced Capacitance Tolerance Value
AssigneeInfineon Technologies AG
InventorsPeter Baumgartner, Philipp Riess, Thomas Benetik
Life of this patent
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Abstract
A semiconductor device includes a capacitance, the numerical value of which is relevant for a device function. The capacitance is formed from a parallel connection of at least a first and a second capacitor element, wherein the first and second capacitor elements are formed in respective manufacturing steps that exhibit uncorrelated process fluctuations.
Claims20
A method of forming a semiconductor device, the method comprising:
- determining a total capacitance value for a circuit element of the semiconductor device;
- selecting a first capacitance value for a first capacitor element and a second capacitance value for a second capacitance element, wherein a parallel combination of the first capacitor element and the second capacitor element will obtain the total capacitance value;
- selecting a first process to form the first capacitor element and a second process to form the second capacitor element such that a process tolerance of the total capacitance value is lessened relative to both the first process alone and the second process alone;
- forming a first capacitor element using the first process;
- and
- forming the second capacitor element in parallel with the first capacitor element using the second process, the second process exhibiting uncorrelated process fluctuations with respect to the first process.
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A method of forming a semiconductor device, the method comprising:
- determining a total capacitance value for a circuit element of the semiconductor device;
- selecting a capacitance value for each of a plurality of capacitor elements, wherein a parallel combination of the plurality of capacitor elements will obtain the total capacitance value;
- selecting a different process to form each of the plurality of capacitor elements, such that a process tolerance of the total capacitance value is lessened relative to a process tolerance of each different process alone;
- forming each of the plurality of capacitor elements using the respective different process, wherein each of the different processes exhibit uncorrelated process fluctuations with respect to each other;
- and
- coupling the plurality of capacitor elements in parallel.
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Dependencies are inferred from the claim text.