Method of depositing metallic film and memory medium

A storage medium storing a program which operates on a computer, the program controlling a film forming apparatus including a chamber configured to receive a substrate to be processed, a stage configured to dispose the substrate to be processed in the chamber, a heater configured to heat the substrate to be processed on the stage, a gas supply device configured to supply a process gas for a film deposition and a cleaning gas into the chamber, a plasma generating device configured to generate plasma of the process gas in the chamber, and an evacuation device configured to evacuate inside of the chamber, the program, when executed, controls the computer to perform steps of:

• forming a conductive precoat film inside the chamber, the precoat film including a metal which forms the metallic film;
• depositing the metallic film by the plasma CVD for a plurality of substrates to be processed, in which the depositing includes:
• disposing a substrate to be processed on the stage by introducing the substrate to be processed into the chamber after the precoating,
• generating plasma of the process gas by supplying the process gas into the chamber while heating the substrate to be processed by the heater, and
• depositing the metallic film by the plasma CVD;
• dry cleaning the chamber by introducing the cleaning gas into the chamber, after the film deposition process for the plurality of substrates to be processed has been completed;
• repeating the steps of forming, depositing, and dry cleaning;
• and
• forming a conductive film on the stage one or more times during the course of the depositing process of the metallic film for the plurality of substrates to be processed.