Apparatus for microlithographic projection exposure and apparatus for inspecting a surface of a substrate
AssigneeCarl Zeiss SMT GmbH
InventorsHans-Juergen Mann, Wolfgang Singer
Life of this patent
Estimating the term…
Abstract
An apparatus (10) for microlithographic projection exposure, which includes: an optical system (18) for imaging mask structures (16) onto a surface (21) of a substrate (20) by projecting the mask structures (16) with imaging radiation (13), the optical system (18) being configured to operate in the EUV and/or higher frequency wavelength range, and various structure defining a measurement beam path (36) for guiding measurement radiation (34), the measurement beam path (36) extending within the optical system (18) such that the measurement radiation (34) only partially passes through the optical system (18) during operation of the apparatus (10).
Claims33
An apparatus for microlithographic projection exposure comprising:
- an optical system comprising a plurality of optical elements and configured to image mask structures onto a surface of a substrate by projecting the mask structures with imaging radiation having an extreme ultraviolet or shorter wavelength, and
- structure defining a measurement beam path and configured to guide measurement radiation, the measurement beam path extending within the optical system,
- wherein at least two of the optical elements are included in the measurement beam path, and the measurement radiation passes only partially through the optical system during operation of the apparatus.
An apparatus for inspecting a surface of a substrate comprising:
- an optical system comprising a plurality of optical elements and configured to image at least one section of a surface of a substrate being inspected into a detection plane by imaging the section with imaging radiation having an extreme ultraviolet or shorter wavelength, and
- structure defining a measurement beam path and configured to guide measurement radiation, the measurement beam path extending within the optical system,
- wherein the measurement radiation passes only partially through the optical system during operation of the apparatus.
A method for determining a property of an arrangement which comprises an apparatus for microlithographic projection exposure and a substrate disposed in an exposure position of the apparatus, the apparatus comprising an optical system configured to image mask structures onto a surface of the substrate by projecting the mask structures using imaging radiation having an extreme ultraviolet or shorter wavelength, the method comprising:
- guiding measurement radiation within the optical system along a measurement beam path such that at least two optical elements of the optical system are included in the measurement beam path, and the measurement radiation passes through only a part of the optical system, and
- determining the property of the arrangement from the guided measurement radiation.
A method for determining a property of an arrangement which comprises an inspection apparatus and a substrate, which is disposed in an inspection position in the inspection apparatus, the apparatus comprising an optical system configured to image at least one section of a surface of the substrate into a detection plane by imaging the section using imaging radiation having an extreme ultraviolet or shorter wavelength,the method comprising:
- guiding measurement radiation within the optical system along a measurement beam path such that the measurement radiation passes through only a part of the optical system, and
- determining the property of the arrangement from the guided measurement radiation.
Dependencies are inferred from the claim text.