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US 2011/0084411 A1Published application
Semiconductor die
AssigneeFreescale Semiconductor, Inc.
InventorsPoh Leng Eu, Lan Chu Tan
Life of this patent
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Abstract
A semiconductor die has a polyimide layer disposed on its top surface. At the corners of the die top, the polyimide layer is roughened or patterned, but not enough such that the die top is exposed. The patterned corners enhance adhesion of a mold compound later disposed on the die top by allowing for enhanced hydrogen bonding between the polyimide layer and the mold compound.
Claims15
A semiconductor die, comprising:
- a polygon shaped silicon die having a plurality of corners and first and second opposing major surfaces;
- and
- a polyimide layer disposed on the first major surface, wherein the polyimide layer is roughened at the plurality of corners but none of the first major surface area at said roughened corners is exposed, and wherein said roughened corners enhance adhesion of a mold compound later applied thereto.
A packaged semiconductor device, comprising:
- a semiconductor die;
- a polyimide layer disposed on a top surface of the die, wherein the polyimide layer is patterned at corners of the die but none of the top surface of the die is exposed by said patterning;
- and
- a mold compound encapsulating the die, wherein the patterned corners provide for enhanced adhesion of the mold compound to the polyimide layer by allowing for enhanced hydrogen bonding between the polyimide layer and the mold compound.
1 more element
Dependencies are inferred from the claim text.