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US 2011/0084400 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeElpida Memory, Inc.
InventorSeiya Fujii
Life of this patent
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Abstract
A semiconductor device includes a substrate, at least one via hole provided on the substrate, a through silicon via provided in the at least one via hole, and an interface chip that is electrically connected to the core chips through the through silicon via. The via hole includes a bowing shaped portion in which a diameter of a center portion is larger than diameters of both edges.
Claims11
A semiconductor device comprising:
- a substrate including first and second surfaces and a via hole, the via hole being elongated in a first direction to penetrate the substrate from the first surface to the second surface;
- and
- an electrode provided in the via hole and including a first portion that comprises first and second end parts and center part sandwiched between the first and second end parts, the first and second end parts and the center part being arranged along the first direction, and the first and second end parts being different in diameter from the center part.
A method of manufacturing a semiconductor device comprising:
- forming a mask pattern having an opening at a position where an electrode is to be formed in a planar view on a first surface of a substrate;
- forming a first portion of a via hole that has a bowing shape in which a diameter of a center part is larger in diameter of first and second end parts by etching the substrate by using the mask pattern;
- and
- forming a electrode by depositing a conductive material such that the via hole is filled with the conductive material.
1 more element
Dependencies are inferred from the claim text.