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US 2011/0079875 A1Published application
Anti-fuse and method for forming the same, unit cell of non volatile memory device with the same
AssigneeMagnaChip Semiconductor, Ltd.
InventorsChang-Hee Shin, Ki-Seok Cho, Seong-Do Jeon
Life of this patent
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Abstract
There is provided an anti-fuse, including a gate dielectric layer formed over a substrate, a gate electrode, including a body portion and one or more protruding portions extending from the body portion, the body portion and the one or more protruding portions being formed to contact on the gate dielectric layer, and a junction region formed in a portion of the substrate exposed by sidewalls of the one or more protruding portions.
Claims20
An anti-fuse, comprising:
- a gate dielectric layer formed over a substrate;
- a gate electrode, comprising a body portion and one or more protruding portions extending from the body portion, the body portion and the one or more protruding portions being formed to contact on the gate dielectric layer;
- and
- a junction region formed in a portion of the substrate exposed by sidewalls of the one or more protruding portions.
1 more element
A unit cell of a nonvolatile memory device, comprising:
- an anti-fuse, comprising:
- a gate dielectric layer formed over a substrate;
- a gate electrode, comprising a body portion and one or more protruding portions extending from the body portion, the body portion and the one or more protruding portions being formed to contact on the gate dielectric layer;
- and
- a junction region formed in a portion of the substrate exposed by sidewalls of the one or more protruding portions.
2 more elements
A method for fabricating an anti-fuse, the method comprising:
- forming a gate dielectric layer over a substrate;
- forming a gate electrode, the gate electrode including a body portion and one or more protruding portions extending from the body portion, the body portion and the one or more protruding portions being formed to contact on the gate dielectric layer;
- and
- forming a junction region in a portion of the substrate exposed by sidewalls of the one or more protruding portions.
1 more element
Dependencies are inferred from the claim text.