Antifuse structure for in line circuit modification
AssigneeInternational Business Machines Corporation
InventorsTerence L. Kane, Michael P. Tenney, Yun-Yu Wang, Keith Kwong Hon Wong
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Abstract
An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
Claims19
An antifuse structure comprising:
- a substrate having an overlying metal layer;
- a dielectric layer formed on an upper surface of the metal layer;
- and
- a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer, wherein the contact via comprises a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
An antifuse structure comprising:
- a substrate having an overlying metal layer;
- a dielectric layer formed on an upper surface of the metal layer;
- a trench formed in the metal layer and filled with a metal material and an untreated or partially treated metal precursor on top of the metal material;
- and
- a plurality of contacts formed within contact vias etched to a top of the trench and contacting the untreated metal precursor.
An antifuse structure comprising:
- a substrate having an overlying metal layer;
- a plurality of contacts formed to the metal layer;
- and
- a tunnel formed between the plurality of contacts and filled with an untreated or partially treated metal precursor.
A method for forming contacts of an antifuse structure, the method comprising:
- etching a contact via to an upper surface of a metal layer overlying a substrate;
- depositing metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material;
- and
- depositing contact material within the contact via to form a contact.
A method for forming contacts of an antifuse structure, the method comprising:
- forming a trench in a metal layer overlying a substrate;
- depositing metal material in the trench and untreated or partially treated metal precursor on top of the metal material;
- planarizing the untreated or partially treated metal precursor within the trench;
- depositing a dielectric layer on the untreated or partially treated metal precursor;
- etching contact vias to an upper surface of the untreated or partially treated metal precursor;
- and
- depositing contact material within the contact vias to form contacts.
Dependencies are inferred from the claim text.