Merged finfets and method of manufacturing the same
AssigneeInternational Business Machines Corporation
InventorsKevin K. CHAN, Zhibin REN, Xinhui WANG, Keith Kwong Hon WONG
Life of this patent
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Abstract
FinFETs are merged together by a metal. The method of manufacturing the FinFETs include forming a plurality of fin bodies on a substrate and merging the fin bodies with a metal. The method further includes implanting source and drain regions through the metal.
Claims25
A method comprising:
- forming a plurality of fin bodies on a substrate;
- merging the fin bodies with a metal;
- and
- implanting source and drain regions through the metal.
A method comprising:
- forming a plurality of FinFETs;
- doping the plurality of FinFETs;
- preparing the surface of the plurality of FinFETs for a metal;
- performing a metal deposition process to merge the plurality of FinFETs with the metal;
- and
- doping source and drain regions through the metal.
A structure comprising a plurality of FinFETs on a substrate which are merged together with a metal.
A design structure embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure comprising a program module configured to form a plurality of FinFETs, the program module:
- forms plurality of fin bodies on a substrate;
- merges the fin bodies with a metal;
- and
- implants source and drain regions through the metal
Dependencies are inferred from the claim text.