Method of fabricating a semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
InventorRobert James Pascoe Lander
Life of this patent
Estimating the term…
Abstract
The present disclosure provides a semiconductor device and method of fabricating a semiconductor device. In an embodiment, the semiconductor device is a finFET device. In an embodiment, the semiconductor device is a silicon on insulator (SOI) device. A method of fabricating the semiconductor device includes providing a substrate, forming an oxide layer on the substrate, forming a fin on a portion of the oxide layer, forming a high k dielectric layer on a portion of the oxide layer and on a portion of the fin, forming a tuned, stressed metal gate on the dielectric layer, and forming a poly-cap on the metal gate. The method of fabrication provided may allow use of SOI substrate or bulk silicon substrates.
Claims20
A method of fabricating a semiconductor device comprising:
- providing a substrate;
- forming an oxide layer on the substrate;
- forming a fin on a portion of the oxide layer;
- forming a high k dielectric layer on a portion of the oxide layer and on a portion of the fin;
- forming a tuned, stressed metal gate on the dielectric layer;
- and
- forming a poly-cap on the metal gate.
A method of fabricating a finFET device comprising:
- providing a substrate;
- forming an oxide layer on the substrate;
- forming a fin on a portion of the oxide layer;
- forming a dielectric layer on a portion of the oxide layer and on a portion of the fin;
- and
- forming a tuned, stressed metal gate on the dielectric layer, wherein the metal gate is formed and tuned such that variation in fin thickness leads to variation in strain transferred to the fin, thereby distorting a band structure of the fin opposing local or gross variations in carrier energy due to quantum confinement effects.
A finFET device, comprising:
- a substrate;
- an oxide layer on the substrate;
- a fin on a portion of the oxide layer;
- a dielectric layer on a portion of the oxide layer and on a portion of the fin;
- and
- a tuned, stressed metal gate on the dielectric layer, wherein the metal gate is formed and tuned such that variation in fin thickness leads to variation in strain transferred to the fin, thereby distorting a band structure of the fin opposing variations in carrier energy due to quantum confinement effects.
Dependencies are inferred from the claim text.