Finfets and methods for forming the same

A Fin field effect transistor (FinFET) comprising:

• a fin-channel body over a substrate, the substrate having a portion between a first isolation region and a second isolation region;
• a gate electrode disposed over the fin-channel body;
• and
• at least one source/drain (S/D) region disposed adjacent to the fin-channel body, the at least one S/D region comprising:
• an epitaxially-grown region disposed over the portion of the substrate, wherein the epitaxially-grown region and the portion of the substrate has an interface and a central region of the interface is below a surface of the first isolation region;
• and
• a silicide structure disposed over the epitaxially-grown region.

A method for forming a Fin field effect transistor (FinFET), the method comprising:

• forming a fin-channel body over a substrate;
• forming a gate electrode over the fin-channel body;
• and
• forming at least one source/drain (S/D) region adjacent to the fin-channel body, the at least one S/D region being substantially free from including any fin structure.