Pixel structure having capacitor compensation

A pixel structure having capacitor compensation, comprising:

• a thin film transistor (TFT), comprising:
• a source electrode, comprising a first electrode bar;
• a drain electrode, comprising a second electrode bar, wherein the second electrode bar is substantially parallel to the first electrode bar;
• a semiconductor layer disposed under the source electrode and the drain electrode, the semiconductor layer comprising a channel region, wherein the channel region is disposed between the first electrode bar and the second electrode bar;
• and
• a gate electrode disposed under the semiconductor layer, the gate electrode having a bar-shaped main part, and at least a protrusion part or at least two indention parts, wherein the bar-shaped main part is parallel to the first electrode bar and the second electrode bar, and the bar-shaped main part is covered by the channel region;
• wherein via the at least one protrusion part or the at least two indention parts, the second electrode bar is disposed over the gate electrode and partially overlaps with the gate electrode, two ends of the second electrode bar do not overlap with the gate electrode in a vertical direction, and an area where the second electrode bar and the gate electrode overlap with each other forms a capacitor.