Back to results
US 2011/0079507 A1Published application
Manufacturing method of semiconductor element
AssigneeShowa Denko K.K.
InventorHiroaki KAJI
Life of this patent
Estimating the term…
Abstract
A manufacturing method of a semiconductor element formed by multi-layering on a substrate so as to include an n-type semiconductor and a p-type semiconductor. The method includes a process of sputtering, with a gas including a group V element, at least two targets (a first target 21 and a second target 22) made of group III elements that are different from each other, thereby to form a film of a III-V compound semiconductor on the substrate 110.
Claims10
A manufacturing method of a semiconductor element formed by multi-layering on a substrate so as to include an n-type semiconductor and a p-type semiconductor,
- the method comprising a process of sputtering, with a gas including a group V element, at least two targets made of group III elements that are different from each other, thereby to form a film of a III-V compound semiconductor on the substrate.
Dependencies are inferred from the claim text.