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US 2011/0057164 A1Published application
Carbon nanotube field emission device with overhanging gate
AssigneeCalifornia Institute of Technology
InventorsRisaku Toda, Michael J. Bronikowski, Edward M. Luong, Harish Manohara
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Abstract
A carbon nanotube field emission device with overhanging gate fabricated by a double silicon-on-insulator process. Other embodiments are described and claimed.
Claims9
A field emission device comprising:
- a wafer having a hole and comprising a silicon substrate;
- a first insulator layer on the silicon substrate;
- a first silicon layer on the first insulator layer;
- a second insulator layer on the first silicon layer;
- and a second silicon layer on the second insulator layer, where the hole has a bottom at the silicon substrate;
- and
- at least one carbon nanotube formed at the bottom of the hole.
4 more elements
A semiconductor process applied to a wafer, the wafer comprising a silicon substrate;
- a first insulator layer on the silicon substrate;
- a first silicon layer on the first insulator layer;
- a second insulator layer on the first silicon layer;
- and a second silicon layer on the second insulator layer;
- the semiconductor process comprising:
- etching through the second silicon layer, through the second insulator layer, and through the first silicon layer to the first insulator layer to define a hole;
- lateral etching in the first silicon layer to laterally enlarge the hole at the first silicon layer;
- etching through the first insulator layer to the substrate, so that the hole has a bottom that includes the substrate;
- and
- forming an array of carbon nanotubes at the bottom of the hole on the substrate.
7 more elements
Dependencies are inferred from the claim text.