US 2011/0034019 A1Published application

Method for fabricating semiconductor structure

AssigneeUnited Microelectronics Corp.

InventorsChih-Hao Yu, Li-Wei Cheng, Che-Hua Hsu, Tian-Fu Chiang, Cheng-Hsien Chou, Chien-Ming Lai, Yi-Wen Chen, Chien-Ting Lin, Guang-Hwa Ma

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Abstract

A method for fabricating a semiconductor structure is disclosed. A substrate with a first transistor having a first dummy gate and a second transistor having a second dummy gate is provided. The conductive types of the first transistor and the second transistor are different. The first and second dummy gates are simultaneously removed to form respective first and second openings. A high-k dielectric layer, a second type conductive layer and a first low resistance conductive layer are formed on the substrate and fill in the first and second openings, with the first low resistance conductive layer filling up the second opening. The first low resistance conductive layer and the second type conductive layer in the first opening are removed. A first type conductive layer and a second low resistance conductive layer are then formed in the first opening, with the second low resistance conductive layer filling up the first opening.

Claims15

Dependent claims

A method for fabricating a semiconductor structure, comprising:

providing a substrate with a first transistor comprising a first dummy gate and a second transistor comprising a second dummy gate, a conductive type of the first transistor being different from a conductive type of the second transistor;
removing the first dummy gate and the second dummy gate to form a first opening and a second opening, respectively;
forming a high-k dielectric layer, a second type conductive layer and a first low resistance conductive layer on the substrate in sequence, the high-k dielectric layer, the second type conductive layer and the first low resistance conductive layer at least filling in the first opening and the second opening, with the first low resistance conductive layer filling up the first opening and the second opening;
removing the first low resistance conductive layer and the second type conductive layer in the first opening;
and
forming a first type conductive layer and a second low resistance conductive layer in the first opening, with the second low resistance conductive layer filling up the first opening.

3 more elements

Dependencies are inferred from the claim text.