Diode assembly
AssigneeRFMD (UK) Limited
InventorJohn Stephen Atherton
Life of this patent
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Abstract
A diode assembly comprising first and second diodes each having a different breakdown voltage, each of the first and second diodes comprising a semiconductor substrate; an electrically conducting channel layer on the semiconductor substrate; an upper semiconductor layer on the channel layer, the upper semiconductor layer comprising a recess; first and second ohmic contacts on the upper semiconductor layer on opposite sides of the recess, the ohmic contacts being connected together to form a first diode contact; a gate electrode within the recess, the gate electrode forming a second diode contact; wherein the area of the recess of the first diode covered by the first gate electrode is different to the area of the recess of the second diode covered by the second gate electrode.
Claims3
A method of manufacture of a diode assembly comprising the steps of:
- providing a semiconductor substrate, the substrate having an electrically conducting channel layer thereon and an upper semiconductor layer on the channel layer;
- providing a first covering layer on the upper semiconductor layer, the covering layer having first and second recess defining apertures thereon;
- etching first and second recesses in the semiconductor layer through the first and second recess defining apertures respectively;
- providing a second covering layer having first and second gate defining apertures therein;
- depositing first and second gates in the first and second recesses through the first and second gate defining apertures respectively;
- wherein the area of the first recess covered by the first gate electrode is different to the area of the second recess covered by the second gate electrode.
Dependencies are inferred from the claim text.