Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device comprising the steps of:

• performing plasma treatment on a glass substrate using a microwave in a nitrogen atmosphere;
• forming an element group over the glass substrate after performing the plasma treatment;
• thinning the glass substrate to form a thinned glass substrate;
• and
• performing sealing with a flexible film so as to cover the thinned glass substrate and the element group.

A method for manufacturing a semiconductor device comprising the steps of:

• performing plasma treatment on a substrate using a microwave in a nitrogen atmosphere;
• forming an element group over the substrate after performing the plasma treatment;
• thinning the substrate to form a thinned substrate;
• and
• performing chemical treatment to the thinned substrate to remove the thinned substrate.

A method for manufacturing a semiconductor device comprising the steps of:

• performing plasma treatment on a substrate using a microwave in a nitrogen atmosphere;
• forming an element group over the substrate after performing the plasma treatment;
• thinning the substrate to form a thinned substrate;
• performing chemical treatment to the thinned substrate to remove the thinned substrate;
• and
• performing sealing with a flexible film so as to cover the element group.

A method for manufacturing a semiconductor device comprising the steps of:

• performing plasma treatment on a substrate using a microwave in a nitrogen atmosphere;
• forming an element group over the substrate after performing the plasma treatment;
• and
• removing the substrate.