Back to results
US 2011/0033955 A1Published application
Nonvolatile ferroelectric memory device and method for manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorHee Bok KANG
Life of this patent
Estimating the term…
Abstract
A nonvolatile ferroelectric memory device includes a plurality of unit cells. Each of the unit cells includes a cell capacitor and a cell transistor. The cell capacitor includes a storage node, a ferroelectric layer, and a plate line. The cell capacitors of more than one of the plurality of unit cells are provided in a trench.
Claims9
1-5. (canceled)
A method for manufacturing a nonvolatile ferroelectric memory device having a cell array block including a plurality of unit cells, the method comprising:
- forming cell transistors on a semiconductor substrate;
- forming contact nodes for connecting cell capacitors to the cell transistors;
- forming a first insulating film over the cell transistors and the contact nodes;
- selectively etching the first insulating film to form trenches;
- forming storage nodes connected to the contact nodes, wherein the storage nodes are separated from each other and a predetermined number of the storage nodes are formed in one of the trenches;
- forming a ferroelectric layer over the storage nodes;
- and
- forming a plate line over the ferroelectric layer.
5 more elements
Dependencies are inferred from the claim text.