Back to results
US 2011/0033618 A1Published application
Gas supply system and method for providing a gaseos deposition medium
OwnerOliver Nöll, Tobias Kleyerinventors
Life of this patent
Estimating the term…
Loading patent…
Loading patent…
OwnerOliver Nöll, Tobias Kleyerinventors
Estimating the term…
A gas supply system for a gas phase deposition reaction chamber, in particular a CVD gas phase deposition reaction chamber or a PECVD gas phase deposition reaction chamber, comprises a gas supply device which has at least one heating element for heating a deposition medium and transferring the deposition medium into the gaseous phase. Furthermore, the gas supply system comprises a gas feeding device for transporting the gaseous deposition medium from the gas supply device to the gas phase deposition reaction chamber, wherein the gas feeding device comprises a sealing element at the transition to the gas phase deposition reaction chamber. As a result, it is possible to provide a gas supply system for a gas phase deposition reaction chamber allowing a homogeneous feeding of even deposition media which are not present in gaseous form at room temperature into the reaction chamber.
1-2. (canceled)
A gas supply system for a gas phase deposition reaction chamber with a gas supply device, wherein the gas supply device has at least one heating element for the heating of a deposition medium that is solid or liquid at room temperature and for the transformation of the deposition medium into the gas phase, as well as with a gas feed device for the transport of the deposition medium transformed into the gas phase from the gas supply device into the gas phase deposition reaction chamber.
A device for a gas phase deposition reaction chamber with two or more gas supply systems arranged in series and/or parallel to each other in accordance with claim 1.
A method for providing a gaseous deposition medium for a gas phase deposition reaction chamber, in which a deposition medium present in its liquid or solid state at room temperature is transformed into the gas phase by means of applying heat, using the gas supply system of claim 1, with the gaseous deposition medium being transported from the gas supply device to the gas phase deposition reaction chamber with the aid of the gas feed device and the deposition medium being fed into the gas phase deposition reaction chamber in its gaseous state.
Dependencies are inferred from the claim text.