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US 2011/0031622 A1Published application
Method for fabricating semiconductor device and semiconductor device
OwnerMakoto HONDA, Junichi Wadainventors
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Abstract
A method for fabricating a semiconductor device according to an embodiment includes: forming a nickel (Ni) film containing phosphorus (P) elements on a substrate having at least one of a diffusion layer formed by using silicon (Si) and a gate electrode formed by using Si exposed on a surface thereof; and forming a nickel silicide (NiSi) film containing P elements on the substrate from the Ni film containing the P elements and Si in at least one of the diffusion layer and the gate electrode.
Claims20
A method for fabricating a semiconductor device, the method comprising:
- forming a nickel (Ni) film containing phosphorus (P) elements on a substrate having at least one of a diffusion layer formed by using silicon (Si) and a gate electrode formed by using Si exposed on a surface thereof;
- and
- forming a nickel silicide (NiSi) film containing P elements on the substrate from the Ni film containing the P elements and Si in at least one of the diffusion layer and the gate electrode.
A semiconductor device comprising:
- a silicon (Si) substrate;
- at least one of a diffusion layer formed in the Si substrate and a gate electrode formed on the Si substrate using Si;
- and
- a nickel silicide (NiSi) film containing phosphorus (P) elements formed on at least one of the diffusion layer and the gate electrode while contacting thereto.
1 more element
A semiconductor device comprising:
- a silicon (Si) substrate;
- a gate electrode formed on the Si substrate using Si;
- a sidewall dielectric film formed at a position adjacent to a side surface of the gate electrode;
- and
- a first nickel silicide (NiSi) film containing phosphorus (P) elements formed on a surface of the gate electrode and a surface of the sidewall dielectric film that is adjacent to the gate electrode excepting parts which do not contact the gate electrode.
2 more elements
Dependencies are inferred from the claim text.