Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorMasahiro Totsuka
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes forming a lower electrode on a semiconductor substrate, applying a photoresist on the lower electrode, forming an opening in the photoresist spaced from the periphery of the lower electrode, forming a high-dielectric constant film of a high-k material having a dielectric constant of 10 or more, performing liftoff so that the high-dielectric-constant film remains on the lower electrode, and forming an upper electrode on the high-dielectric-constant film remaining after the liftoff.
Claims11
(canceled)
A semiconductor device comprising:
- a semiconductor substrate;
- a transistor on the semiconductor substrate;
- a lower electrode supported by the semiconductor substrate and spaced from the transistor;
- a CVD insulating film supported by the lower electrode, extending from the lower electrode and covering the transistor, and having a thickness at the lower electrode in a range from 30 nm to 50 nm;
- a high-dielectric constant film on the first CVD insulating film opposite the lower electrode and constituted of a high-k material having a dielectric constant of at least 10;
- and
- an upper electrode supported by the high-dielectric constant film.
A semiconductor device comprising:
- a semiconductor substrate;
- a transistor on the semiconductor substrate;
- a lower electrode supported by the semiconductor substrate and spaced from the transistor;
- a first CVD insulating film supported by the lower electrode, extending from the lower electrode and covering the transistor, wherein the high-dielectric constant film and the first CVD insulating film have respective thicknesses and the ratio of the thickness of the first CVD insulating film to the sum of the thicknesses of the high dielectric-constant film and the first CVD insulating film is in a range from 1:9 to 1:11;
- a high-dielectric constant film on the first CVD insulating film and constituted of a high-k material having a dielectric constant of at least 10;
- and
- an upper electrode supported by the high-dielectric constant film.
9-18. (canceled)
Dependencies are inferred from the claim text.