High Breakdown Voltage Embedded MIM Capacitor Structure
AssigneeQUALCOMM Incorporated
InventorsWootag Kang, Jonghae Kim
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Abstract
Methods and devices related to a plurality of high breakdown voltage embedded capacitors are presented. A semiconductor device may include gate material embedded in an insulator, a plurality of metal contacts, and a plurality of capacitors. The plurality of capacitors may include a lower electrode, a dielectric formed so as to cover a surface of the lower electrode, and an upper electrode formed on the dielectric. Further, the plurality of contacts may connect each of the lower electrodes of the plurality of capacitors to the gate material. The plurality of capacitors may be connected in series via the gate material.
Claims35
A semiconductor device, comprising:
- gate material embedded in an insulator;
- and
- first and second capacitors, each capacitor comprising:
- a lower electrode;
- a dielectric formed so as to cover the surface of the lower electrode;
- and an upper electrode formed on the dielectric,
- wherein metal contacts couple the lower electrode of each of the capacitors to the gate material, and wherein the first and second capacitors are connected in series via the gate material.
A method for fabricating a semiconductor device having a plurality of capacitors comprising:
- embedding a gate material in an insulating layer;
- forming a plurality of metal contacts;
- forming first and second capacitors, wherein each of the capacitors comprises:
- a lower electrode formed from a first metal layer;
- a dielectric formed so as to cover the surface of the lower electrode;
- and an upper electrode formed from a second metal layer formed on the dielectric;
- and
- connecting each of the lower electrodes of the capacitors to the gate material via the metal contacts, wherein the first and second capacitors are connected in series via the gate material.
A method for fabricating a semiconductor device having a plurality of embedded capacitors comprising:
- step for embedding a gate material in an insulating layer;
- step for forming a plurality of metal contacts;
- step for forming first and second capacitors, wherein each of the capacitors comprises:
- a lower electrode formed from a first metal layer;
- a dielectric formed so as to cover the surface of the lower electrode;
- and an upper electrode formed from a second metal layer formed on the dielectric;
- step for connecting each of the lower electrodes of the capacitors to the gate material via the metal contacts, wherein the plurality of capacitors are connected in series via the gate material.
A semiconductor device comprising:
- means for insulating a gate material;
- first and second capacitors, each comprising:
- a lower electrode;
- a dielectric formed so as to cover a surface of the lower electrode;
- and an upper electrode formed on the dielectric;
- and
- means for coupling each of the capacitors to the gate material, wherein the capacitors are connected in series via the gate material.
Dependencies are inferred from the claim text.