Method for fabricating a MIM capacitor using gate metal for electrode and related structure
AssigneeBroadcom Corporation
InventorsWei Xia, Xiangdong Chen, Akira Ito
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Abstract
According to one exemplary embodiment, a method for fabricating a MIM capacitor in a semiconductor die includes forming a dielectric one segment over a substrate and a metal one segment over the dielectric one segment, where the metal one segment forms a lower electrode of the MIM capacitor. The method further includes forming a dielectric two segment over the dielectric one segment and a metal two segment over the dielectric two segment, where a portion of the metal two segment forms an upper electrode of the MIM capacitor. The metal one segment comprises a first gate metal. The metal two segment can comprise a second gate metal.
Claims21
1-10. (canceled)
A MIM capacitor in a semiconductor die, said MIM capacitor comprising:
- a lower electrode of said MIM capacitor situated over a substrate, said lower electrode of said MIM capacitor comprising a first gate metal;
- a MIM capacitor dielectric situated over said lower electrode of said MIM capacitor;
- an upper electrode of said MIM capacitor situated over said MIM capacitor dielectric.
A MIM capacitor comprising:
- a first dielectric segment formed over a semiconductor substrate;
- a lower electrode of said MIM capacitor situated over said first dielectric segment;
- an upper electrode of said MIM capacitor situated over said lower electrode;
- and
- a MIM capacitor dielectric situated between said lower electrode and said upper electrode;
- said lower electrode comprising a first gate metal.
Dependencies are inferred from the claim text.