Nonvolatile semiconductor memory device and method for manufacturing same

A method of manufacturing a nonvolatile semiconductor memory device comprising:

• forming a stacked body by alternately stacking impurity-doped silicon layers and silicon layers without impurity on a substrate;
• forming a slit in the stacked body from an upper surface side of the stacked body to divide each of the impurity-doped silicon layers into a plurality of gate electrodes, the slit being extended in a first direction parallel to an upper surface of the substrate;
• burying an insulation material in the slit to form an insulation plate;
• forming a through-hole so as to pierce the stack body, the through-hole being extended in an up-to-down direction perpendicular to the upper surface of the substrate;
• removing the silicon layers without impurity by performing wet etching via the through-hole;
• depositing a block insulation film on an interior surface of the through-hole and on an upper surface and a lower surface of the gate electrodes;
• depositing a charge storage film on the block insulation film;
• depositing a tunnel insulation film on the charge storage film;
• and
• burying a semiconductor material in the through-hole to form a semiconductor pillar extended in the up-to-down direction.

A method of manufacturing a nonvolatile semiconductor memory device comprising:

• forming a stacked body by alternately stacking impurity-doped silicon layers and silicon layers without impurity on a substrate;
• forming a slit on an upper surface of the stacked body to divide each of the impurity-doped silicon layers into a plurality of gate electrodes, the slit being extended in a first direction parallel to an upper surface of the substrate;
• burying a sacrifice material in the slit;
• forming a through-hole so as to pierce the stack body, the through-hole being extended in an up-to-down direction perpendicular to the upper surface of the substrate;
• removing the silicon layers without impurity by performing wet-etching via the through-hole;
• depositing a block insulation film on an interior surface of the through-hole and an upper surface and a lower surface of the gate electrodes;
• depositing a charge storage film on the block insulation film;
• depositing a tunnel insulation film on the charge storage film;
• burying a semiconductor material in the through-hole to form a semiconductor pillar extended in the up-to-down direction;
• removing the sacrifice material;
• forming a metal silicide layer on a surface of each of the gate electrodes exposed in the slit;
• and
• burying an insulation material in the slit to form an insulation plate.