Liquid processing apparatus for substrate and liquid processing method
AssigneeTokyo Electron Limited
InventorsYoshifumi AMANO, Tsuyoshi MIZUNO
Life of this patent
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Abstract
Disclosed is a liquid processing apparatus and a liquid processing method, which can process an entire wafer at a sufficiently high temperature and can sufficiently suppress adhesion of particles on a surface of the wafer, when the peripheral portion of the wafer is processed. The liquid processing apparatus includes a holding part to hold the substrate, a rotation driving part to rotate the holding part, and a shield unit. The shield unit includes an opposed plate opposed to the substrate held by the holding part, a heating part to heat the substrate through the opposed plate, and a heated gas supplying part to supply heated gas to a surface of the substrate held by the holding part.
Claims18
A liquid processing apparatus for a substrate, comprising:
- a holding part to hold the substrate;
- a rotation driving part to rotate the holding part;
- a processing liquid supplying part to supply a processing liquid to a peripheral portion of the substrate held by the holding part;
- and
- a shield unit comprising an opposed plate opposed to the substrate held by the holding part, a heating part to heat the substrate through the opposed plate, and a heated gas supplying part to supply heated gas to a surface of the substrate held by the holding part.
A liquid processing method for a substrate, comprising:
- holding the substrate by a holding part;
- rotating the holding part holding the substrate;
- supplying a processing liquid to a peripheral portion of the substrate held by the holding part;
- heating the substrate by a heating part of a shield unit through an opposed plate, which is opposed to the substrate held by the holding part;
- and
- supplying heated gas to a surface of the substrate held by the holding part.
Dependencies are inferred from the claim text.