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US 2011/0024041 A1Published application
Method of manufacturing semiconductor device, and etching apparatus
AssigneeNEC Electronics Corporation
InventorMasahiro Komuro
Life of this patent
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Abstract
An etching apparatus includes a process chamber into which an etching gas is introduced, an electrode for generating plasma disposed in the process chamber, a stage disposed in the process chamber, on which a substrate is placed, and a shadow ring disposed in the process chamber and placed above the stage, so as to cover the circumferential portion and an inner region adjacent thereto of the substrate in a non-contact manner. The shadow ring has an irregular pattern on the inner circumferential edge thereof.
Claims8
An etching apparatus comprising:
- a process chamber into which an etching gas is introduced;
- an electrode for generating plasma disposed in said process chamber;
- a stage disposed in said process chamber, on which a substrate is placed;
- and
- a shadow ring disposed in said process chamber and placed above said stage, so as to cover the circumferential portion and an inner region adjacent thereto of said substrate in a non-contact manner,
- wherein said shadow ring has an irregular pattern on the inner circumferential edge thereof.
3 more elements
Dependencies are inferred from the claim text.