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US 2011/0008915 A1Published application
Method for use in making electronic devices having thin-film magnetic components
AssigneeCrocus Technology SA
InventorsJean Pierre Nozieres, Jason Reid
Life of this patent
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Abstract
Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench followed by processing the deposited thin-film to have the desired thickness.
Claims25
A method, comprising:
- providing a substrate that comprises a first magnetic layer on the substrate;
- forming a trench and a dielectric tunnel junction layer on the substrate such that at least a portion of the exposed bottom portion of the trench is covered by the dielectric tunnel junction layer;
- depositing a second magnetic layer after the dielectric tunneling layer such that a thin-film of the second magnetic layer is formed above the dielectric tunnel junction layer within the trench so as to form a magnetic tunnel junction at the bottom of the trench.
A method, comprising:
- providing a substrate;
- forming a trench, comprising:
- depositing a trench layer on the substrate;
- and
- forming a trench in the trench layer;
- forming a plurality of thin-film components of a device in the trench, wherein the plurality of thin-film components comprises at least a magnetic thin-film component, comprising:
- depositing the plurality of thin-film components in the trench and on the trench layer;
- and
- processing the deposited thin-film components by removing a portion of the deposited layers on the trench layer such that the thin-film components within the trench have a desired thickness.
6 more elements
A method, comprising:
- providing a substrate comprising a first magnetic layer and a magnetic tunnel junction layer of a magnetic-random-access memory cell;
- depositing a trench layer on the substrate;
- etching the trench layer to form a trench, wherein the etching is stopped by the magnetic tunnel junction layer;
- and wherein a portion of the tunnel junction layer is exposed at the bottom of the trench;
- depositing a stack of thin films in the trench and on the trench layer;
- and
- processing the deposited stack of thin films and the trench layer such that the stack of thin films within the trench has a desired thickness.
4 more elements
Dependencies are inferred from the claim text.