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US 2010/0328898 A1Published application
Integrated Circuits Having Interconnects and Heat Dissipators Based on Nanostructures
AssigneeSmoltek AB
InventorMohammad Shafiqul Kabir
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Abstract
The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for interconnects and/or as heat dissipators in electronic devices.
Claims14
A heat dissipator, comprising:
- an insulating substrate;
- a plurality of nanostructures supported by said insulating substrate,
- wherein each of said nanostructures comprises:
- a plurality of intermediate layers on the insulating substrate, wherein at least two of the plurality of intermediate layers are interdiffused, and wherein material of the at least two of the plurality of intermediate layers that are interdiffused is present in the nanostructure, the plurality of intermediate layers including at least one layer that affects a morphology of the nanostructure and at least one layer that affects an electrical property of an interface between the insulating layer and the nanostructure.
1 more element
A heat dissipator, comprising:
- a plurality of nanostructures being at least partly embedded in an insulator,
- wherein each of said nanostructures comprises:
- a plurality of intermediate layers on the insulating substrate, wherein at least two of the plurality of intermediate layers are interdiffused, and wherein material of the at least two of the plurality of intermediate layers that are interdiffused is present in the nanostructure, the plurality of intermediate layers including at least one layer that affects a morphology of the nanostructure and at least one layer that affects an electrical property of an interface between the insulating layer and the nanostructure.
A method of forming a heat dissipator, the method comprising:
- depositing a semiconducting layer on a substrate;
- depositing a catalyst layer on the semiconducting layer;
- without first annealing the substrate, causing the substrate to be heated to a temperature at which a nanostructure can form;
- and
- growing a plurality of nanostructures on the catalyst layer at the temperature.
2 more elements
Dependencies are inferred from the claim text.