Method of forming a contact hole
AssigneeUnited Microelectronics Corp.
InventorsPei-Yu Chou, Jiunn-Hsiung Liao
Life of this patent
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Abstract
A method of forming a contact hole is provided. A pattern is formed in a photo resist layer. The pattern is exchanged into a silicon photo resist layer to form a first opening. Another pattern is formed in another photo resist layer. The pattern is exchanged into a silicon photo resist layer to form a second opening. The pattern having the first, and second openings is exchanged into the interlayer dielectric layer, and etching stop layer to form the contact hole. The present invention has twice exposure processes and twice etching processes to form the contact hole having small distance.
Claims9
A method for forming a contact hole, comprising:
- providing a substrate to form an interlayer dielectric layer and a first silicon-containing photo resist layer thereon sequentially;
- forming a first photo resist pattern on said first silicon-containing photo resist layer;
- performing a first etching procedure on said first silicon-containing photo resist layer to form a plurality of first openings by using said first photo resist pattern as an etching mask;
- removing said first photo resist pattern;
- performing an etching procedure to form a plurality of first contact holes in said interlayer dielectric layer by using said first openings as an etching mask and removing said first silicon-containing photo resist layer;
- forming a second silicon-containing photo resist layer on said interlayer dielectric layer;
- forming a second photo resist pattern on said second silicon-containing photo resist layer;
- and
- performing an etching procedure to form a plurality of second contact holes in said interlayer dielectric layer by using said second photo resist pattern as an etching mask.
Dependencies are inferred from the claim text.