Method of forming flash memory device having inter-gate plug
AssigneeHynix Semiconductor Inc.
InventorYun Bong LEE
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Abstract
A method of forming a non-volatile memory device includes the following steps. First and second cell gates are formed in a cell region. First and second peripheral gates are formed in a peripheral-region. A first insulating layer is formed over the first and second cell gates and the first and second peripheral gates. A second conductive layer is formed over the first insulating layer. A third insulating layer is formed over the second conductive layer. Selected portions of the third insulating layer, the second conductive layer, and the first insulating layer are removed to form an inter-gate plug provided between the first and second cell gates. The inter-gate plug completely fills a space defined between the first and second cell gates.
Claims9
-12. (canceled)
A method of fabricating a flash memory device, the method comprising:
- forming first and second cell gates in a cell region;
- forming first and second peripheral gates in a peri-region;
- forming a first insulating layer over the first and second cell gates and the first and second peripheral gates;
- forming a second conductive layer over the first insulating layer;
- forming a third insulating layer over the second conductive layer;
- removing selected portions of the third insulating layer, the second conductive layer, and the first insulating layer, to form an inter-gate plug provided between the first and second cell gates, the inter-gate plug completely filling a space defined between the first and second cell gates.
Dependencies are inferred from the claim text.