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US 2010/0304556 A1Published application
Integrated circuit system with vertical control gate and method of manufacture thereof
AssigneeChartered Semiconductor Manufacturing Ltd.
InventorsChunshan Yin, Jae Gon Lee, Shyue Seng Tan, Elgin Kiok Boone Quek, Chung Foong Tan, Lee Wee Teo
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Abstract
A method of manufacture of an integrated circuit system includes: providing a mesa over a substrate; forming a trench in the substrate adjacent the mesa; forming a second gate and a charge storage material along a trench sidewall; and forming a first gate from the mesa.
Claims20
A method of manufacture of an integrated circuit system comprising:
- providing a mesa over a substrate;
- forming a trench in the substrate adjacent the mesa;
- forming a second gate and a charge storage material along a trench sidewall;
- and
- forming a first gate from the mesa.
2 more elements
A method of manufacture of an integrated circuit system comprising:
- providing a first gate layer formed over a substrate;
- forming a trench in the substrate aligned to the first gate layer;
- forming a charge storage material within the trench and over the first gate layer;
- forming a second gate layer over the charge storage material within the trench and over the first gate layer;
- forming a second gate and a second gate dielectric along a trench sidewall from the second gate layer and the charge storage material;
- and
- forming a first gate from the first gate layer.
4 more elements
A method of manufacture of an integrated circuit system comprising:
- providing a mesa including a first gate dielectric, a first gate layer, and a cap layer over a substrate;
- forming a trench in the substrate aligned to the mesa;
- forming a charge storage material within the trench and over the mesa;
- forming a second gate layer over the charge storage material within the trench and over the mesa;
- forming a second gate and a second gate dielectric along a trench sidewall from the second gate layer and the charge storage material;
- forming a first gate from the mesa;
- and
- forming a doped region adjacent the first gate and the second gate.
5 more elements
Dependencies are inferred from the claim text.